? 2004 ixys all rights reserved hiperfast tm igbt isoplus247 tm (electrically isolated back surface) isoplus 247 g = gate, c = collector e = emitter * patent pending e153432 symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c 156 a i c110 t c = 110 c 102 a i l(rms) external lead limit 76 a i cm t c = 25 c, 1 ms 300 a ssoa v ge = 15 v, t vj = 125 c, r g = 2.4 ? i cm = 200 a (rbsoa) clamped inductive load @ 0.8 v ces p c t c = 25 c 520 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s v isol 50/60 hz, rms, t = 1minute leads-to-tab 2500 v weight 5g g c e isolated backside* symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 1 ma, v ge = 0 v 600 v v ge(th) i c = 1 ma, v ce = v ge 2.5 5.5 v i ces v ce = 0.8 ? v ces t j = 25 c 200 a v ge = 0 v t j = 150 c2ma i ges v ce = 0 v, v ge = 20 v 400 na v ce(sat) i c = 100a, v ge = 15 v (see note 1) 2.1 v features z dcb isolated mounting tab z meets to-247ad package outline z high current handling capability z latest generation hdmos tm process z mos gate turn-on - drive simplicity applications z uninterruptible power supplies (ups) z switched-mode and resonant-mode power supplies z ac motor speed control z dc servo and robot drives z dc choppers advantages z easy assembly z high power density z very fast switching speeds for high frequency applications ds98744a(08/04) ixgr 120n60b v ces = 600 v i c25 = 156 a v ce(sat) = 2.1 v
ixys reserves the right to change limits, test conditions, and dimensions. ixgr 120n60b symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 60a; v ce = 10 v, 50 75 s pulse test, t 300 s, duty cycle 2 % c ies 11000 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 680 pf c res 190 pf q g 350 nc q ge i c = 100a, v ge = 15 v, v ce = 0.5 v ces 72 nc q gc 131 nc t d(on) 60 ns t ri 45 ns e on 2.4 mj t d(off) 200 360 ns t fi 160 280 ns e off 5.5 9.6 mj t d(on) 60 ns t ri 60 ns e on 4.8 mj t d(off) 290 ns t fi 250 ns e off 8.7 mj r thjc 0.3 k/w r thck 0.15 k/w inductive load, t j = 25 c i c = 100a, v ge = 15 v v ce = 0.8 ? v ces , r g = r off = 2.4 ? remarks: switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g inductive load, t j = 125 c i c = 100a, v ge = 15 v v ce = 0.8 ? v ces , r g = r off = 2.4 ? remarks: switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g isoplus 247 outline dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 .244 r 4.32 4.83 .170 .190 1 gate, 2 drain (collector) 3 source (emitter) 4 no connection ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463
? 2004 ixys all rights reserved ixgr 120n60b fig. 2. extended output characteristics @ 25 o c 0 50 100 150 200 250 300 00.511.522.533.54 v c e - volts i c - amperes v ge = 15v 13v 11v 5v 7v 9v fig. 3. output characteristics @ 125 o c 0 25 50 75 100 125 150 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 1. output characteristics @ 25 o c 0 25 50 75 100 125 150 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 v c e - volts i c - amperes v ge = 15v 13v 11v 9v 5v 7v fig. 4. dependence of v ce( sat ) on temperature 0.7 0.8 0.8 0.9 0.9 1.0 1.0 1.1 1.1 1.2 1.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v c e (sat) - normalized i c = 100a i c = 50a v ge = 15v i c = 150a fig. 5. collector-to-em itter voltage vs. gate-to-emitter voltage 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 6 7 8 9 10 11 12 13 14 15 v g e - volts v c e - volts t j = 25 o c i c = 150a 100a 50a fig. 6. input adm ittance 0 20 40 60 80 100 120 140 160 180 44.555.566.577.58 v g e - volts i c - amperes t j = 125 o c 25 o c -40 o c
ixys reserves the right to change limits, test conditions, and dimensions. ixgr 120n60b fig. 7. transconductance 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 180 i c - amperes g f s - siemens t j = -40 o c 25 o c 125 o c fig. 8. dependence of turn-off energy loss on r g 1 2 3 4 5 6 7 8 9 10 2345678910 r g - ohms e o f f - millijoules t j = 125 o c v ge = 15v v ce = 480v i c = 50a i c = 100a fig. 9. dependence of turn-off energy loss on i c 2 2 3 3 4 4 5 5 50 55 60 65 70 75 80 85 90 95 100 i c - amperes e o f f - millijoules r g = 2.7 ? v ge = 15v v ce = 480v t j = 125 o c t j = 25 o c fig. 10. dependence of turn-off energy loss on temperature 1 2 2 3 3 4 4 5 5 6 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e o f f - millijoules i c = 100a r g = 2.7 ? v ge = 15v v ce = 480v i c = 50a fig. 11. dependence of turn-off sw itching tim e on r g 100 200 300 400 500 600 700 2345 678910 r g - ohms switching time - nanoseconds t d(off) t fi - - - - - - t j = 125oc v ge = 15v v ce = 480v i c = 50a 100a i c = 100a 50a fig. 12. dependence of turn-off sw itching tim e on i c 50 100 150 200 250 300 350 50 60 70 80 90 100 i c - amperes switching time - nanoseconds t d(off) t fi - - - - - r g = 2.7 ? v ge = 15v v ce = 480v t j = 125 o c t j = 25 o c
? 2004 ixys all rights reserved ixgr 120n60b fig. 14. gate charge 0 2 4 6 8 10 12 14 16 0 100 200 300 400 500 q g - nanocoulombs v g e - volts v ce = 300v i c = 100a i g = 10ma fig. 15. capacitance 100 1000 10000 100000 0 5 10 15 20 25 30 35 40 v c e - volts capacitance - p f c ies c oes c res f = 1 mhz fig. 13. dependence of turn-off sw itching time on temperature 50 100 150 200 250 300 350 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade switching time - nanoseconds t d(off) , t fi - - - - - r g = 2.7 ? , v ge = 15v v ce = 480v i c = 100a 50a i c = 50a i c = 100a fig. 16. reverse-bias safe operating area 0 20 40 60 80 100 120 140 160 180 200 220 100 150 200 250 300 350 400 450 500 550 600 v c e - volts i c - amperes t j = 125 o c r g = 2.7 ? dv/dt < 5v/ns fig. 17. m axim um trans ie nt the rm al re s is tance 0.01 0.1 1 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - oc / w
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